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SSD Gigabyte AORUS NVMe Gen4 4.0x4, NVMe 1.3 1TB M.2 2280 Up to 5000 MB/s / Up to 4400 MB/s , up to 750k / up to 700k MTBF 1.77

GP-ASM2NE6100TTTD B
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Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe 4.0 x4 (NVMe 1.3)Tehnologia pentru memorieDDR4 SDRAMFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate750000 IOPSMaximum Random Wr
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Locatia dispozitivuluiInternal
Factor de formaM.2 (2280)
Capacitate de stocare1 TB
Suporta canal de datePCIe 4.0 x4 (NVMe 1.3)
Tehnologia pentru memorieDDR4 SDRAM
Flash Memory Cell TechnologyTriple-Level Cell
Maximum Random Read Rate750000 IOPS
Maximum Random Write Rate700000 IOPS
Maximum Sequential Read Rate5000 MB/s
Maximum Sequential Write Rate4400 MB/s
Total Bytes Written (TBW)1800 TB
M.2 Interface Quantity1
Timpul presupus intre caderi1770000 h
Solid State Drive FeaturesTRIM Support
Heat Spreader for Controller
StandardS.M.A.R.T.
Consumul minim de putere6.6 W
Temperatura maxima de operare a mediului ambiant70 °C
Temperatura ambientala minima de operare0 °C
Temp ambientala maxima pentru non operare85 °C
Temp ambientala minima pentru non operare-40 °C
Adancime80.5 mm
Inaltime11.4 mm
Latime23.5 mm
Produse returnabile aflate in garantieYes
Termen de garantie60 month(s)
Criterii de validare a garantieiSerial Number
Greutatea bruta a pachetului0.05 kg
Greutatea neta a pachetului0.001 kg
Bucati in pachet1
Greutatea bruta a cutiei0.05 kg
Retail Packaging Net Weight Carton0.001 kg
Retail Packaging Net Weight Plastic0.001 kg
Pachete (colete) in cutie1
Tip pachetRetail
Detalii ale produsului
GIGABYTE
GP-ASM2NE6100TTTD B
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SSD Gigabyte AORUS NVMe Gen4 4.0x4, NVMe 1.3 1TB M.2 2280 Up to 5000 MB/s / Up to 4400 MB/s , up to 750k / up to 700k MTBF 1.77

SSD Gigabyte AORUS NVMe Gen4 4.0x4, NVMe 1.3 1TB M.2 2280 Up to 5000 MB/s / Up to 4400 MB/s , up to 750k / up to 700k MTBF 1.77

Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe 4.0 x4 (NVMe 1.3)Tehnologia pentru memorieDDR4 SDRAMFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate750000 IOPSMaximum Random Wr
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